| PART |
Description |
Maker |
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYB39S256160T |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HYE25L256160AC-7.5 HYE25L256160AF-7.5 HYB25L256160 |
256-MBit Mobile-RAM
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, GREEN, PLASTIC, TFBGA-54
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54
|
Qimonda AG
|
| HYB18L256160BCX-7.5 HYE18L256160BCX-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Qimonda AG
|
| IS42S16800B IS42S16800B-6T IS42S81600B-6T IS42S168 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc.
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| HB52RF329E2 HB52RF329E2-75F |
256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
SYNCHRONOUS DRAM MODULE, DMA168
|
Hitachi,Ltd.
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
